NPN bipolar junction transistor for surface mount applications, featuring a 10V collector-emitter breakdown voltage and a maximum collector current of 500mA. This component offers a transition frequency of 470MHz and a maximum power dissipation of 2W. Encased in a TO-261-4 (SOT223) package with tin plating, it operates within a temperature range of -65°C to 175°C and is lead-free and RoHS compliant.
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NXP BLT50,115 technical specifications.
| Package/Case | TO-261-4 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector Emitter Voltage (VCEO) | 10V |
| Contact Plating | Tin |
| Emitter Base Voltage (VEBO) | 3V |
| Gain | 10dB |
| Height | 1.7mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 2W |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 470MHz |
| Width | 3.7mm |
| RoHS | Compliant |
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