P-channel vertical D-MOS logic level FET in a 3-pin TO-236 (SOT) package. Features a Drain to Source Voltage (Vdss) of -12V, continuous Drain Current (ID) of 750mA, and a maximum Drain-source On Resistance (Rds On) of 500mR. Operates with a Gate to Source Voltage (Vgs) of 8V and a nominal threshold voltage of 680mV. Offers fast switching with a turn-on delay time of 2ns and fall time of 20ns. Maximum power dissipation is 417mW, with an operating temperature range from -55°C to 150°C.
PackageSOT
Power417mW
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Technical Specifications
NXP BSH205,215 technical specifications.
General
Package/Case
SOT
Contact Plating
Tin
Continuous Drain Current (ID)
750mA
Drain to Source Voltage (Vdss)
-12V
Drain-source On Resistance-Max
500mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
200pF
Length
3mm
Max Dual Supply Voltage
-12V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
417mW
Nominal Vgs
-680mV
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Power Dissipation
417mW
Rds On Max
400mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
680mV
Turn-Off Delay Time
45ns
Turn-On Delay Time
2ns
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP BSH205,215 Datasheet
Download the complete datasheet for NXP BSH205,215 to view detailed technical specifications.
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