P-channel vertical D-MOS logic level FET in a 3-pin TO-236 (SOT) package. Features a Drain to Source Voltage (Vdss) of -12V, continuous Drain Current (ID) of 750mA, and a maximum Drain-source On Resistance (Rds On) of 500mR. Operates with a Gate to Source Voltage (Vgs) of 8V and a nominal threshold voltage of 680mV. Offers fast switching with a turn-on delay time of 2ns and fall time of 20ns. Maximum power dissipation is 417mW, with an operating temperature range from -55°C to 150°C.
PackageSOT
Power417mW
Quick Jump:
Technical Specifications
NXP BSH205,215 technical specifications.
General
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 750mA |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 500mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 200pF |
| Length | 3mm |
| Max Dual Supply Voltage | -12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 417mW |
| Nominal Vgs | -680mV |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 417mW |
| Rds On Max | 400mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 680mV |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 2ns |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BSH205,215 Datasheet
Download the complete datasheet for NXP BSH205,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
