N-channel MOSFET, surface mount, TO-253-4 package. Features 10V drain-source breakdown voltage and 50mA continuous drain current. Offers a maximum drain-source on-resistance of 45mΩ. Operates from -65°C to 125°C with 230mW power dissipation. Input capacitance is 1.5pF.
PackageTO-253-4
Voltage Rating10V
Current Rating50mA
MountingSurface Mount
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Technical Specifications
NXP BSS83,215 technical specifications.
General
Package/Case
TO-253-4
Contact Plating
Tin
Continuous Drain Current (ID)
50mA
Current Rating
50mA
Drain to Source Breakdown Voltage
10V
Drain to Source Resistance
45R
Drain to Source Voltage (Vdss)
10V
Drain-source On Resistance-Max
45MR
Height
1mm
Input Capacitance
1.5pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
125°C
Min Operating Temperature
-65°C
Max Power Dissipation
230mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
230mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Voltage Rating
10V
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP BSS83,215 Datasheet
Download the complete datasheet for NXP BSS83,215 to view detailed technical specifications.
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