N-channel MOSFET, surface mount, TO-253-4 package. Features 10V drain-source breakdown voltage and 50mA continuous drain current. Offers a maximum drain-source on-resistance of 45mΩ. Operates from -65°C to 125°C with 230mW power dissipation. Input capacitance is 1.5pF.
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NXP BSS83,215 technical specifications.
| Package/Case | TO-253-4 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 50mA |
| Current Rating | 50mA |
| Drain to Source Breakdown Voltage | 10V |
| Drain to Source Resistance | 45R |
| Drain to Source Voltage (Vdss) | 10V |
| Drain-source On Resistance-Max | 45MR |
| Height | 1mm |
| Input Capacitance | 1.5pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 230mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 230mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Voltage Rating | 10V |
| Width | 1.4mm |
| RoHS | Compliant |
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