The BST50,115 is a surface mount NPN bipolar junction transistor with a maximum collector current of 1A and a maximum power dissipation of 1.3W. It has a maximum collector-emitter breakdown voltage of 45V and a maximum collector-base voltage of 60V. The device is packaged in a TO-243AA package and is lead-free and RoHS compliant. It has a maximum operating temperature of 150°C and a transition frequency of 200MHz.
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NXP BST50,115 technical specifications.
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 1.3V |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | NPN |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| RoHS | Compliant |
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