The BST52 is a NPN bipolar junction transistor with a collector emitter breakdown voltage of 80V and a maximum power dissipation of 1.3W. It is packaged in a SOT-89 package and is available on cut tape. The transistor is RoHS compliant and has a maximum operating temperature of 150°C. The BST52 has a transition frequency of 200MHz and is not Reach SVHC compliant. It is suitable for use in high-power applications where a high voltage and current are required.
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NXP BST52 technical specifications.
| Package/Case | SOT-89 |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.3W |
| Packaging | Cut Tape |
| Polarity | NPN |
| Power Dissipation | 1.3W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| RoHS | Compliant |
