The BUJ403A,127 is a TO-220-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 550V and a maximum collector current of 6A. It can handle a maximum power dissipation of 100W and operates within a temperature range of -65°C to 150°C. This transistor is RoHS compliant and suitable for use in a variety of applications.
Sign in to ask questions about the NXP BUJ403A,127 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP BUJ403A,127 technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 550V |
| Collector Emitter Voltage (VCEO) | 550V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 1.2kV |
| hFE Min | 13 |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole, Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| RoHS | Compliant |
Download the complete datasheet for NXP BUJ403A,127 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
