
The BUK654R6-55C,127 is a 55V N-Channel TrenchMOS MOSFET with a maximum continuous drain current of 100A and a maximum power dissipation of 204W. It features a TO-220AB package with a tin contact plating and is packaged in a rail or tube quantity of 50. The device is RoHS compliant and has a maximum operating temperature range of -55°C to 175°C. The MOSFET has a drain to source breakdown voltage of 55V and a drain to source resistance of 4.6mR, with a turn-on delay time of 25ns and a turn-off delay time of 252ns.
NXP BUK654R6-55C,127 technical specifications.
| Package/Case | TO-220AB |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 4.6mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 116ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.75nF |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 204W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 204W |
| Rds On Max | 5.4mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 252ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
Download the complete datasheet for NXP BUK654R6-55C,127 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.