The BUK7507-30B127 is a high-power N-CHANNEL MOSFET with a maximum continuous drain current of 108A and a maximum drain to source breakdown voltage of 30V. It features a low drain to source resistance of 7mR and a fast switching time with a fall time of 44ns and a turn-off delay time of 51ns. The device is packaged in a TO-220AB package and is rated for operation over a temperature range of -55°C to 175°C.
PackageTO-220AB
PolarityN-CHANNEL
Power157W
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Technical Specifications
NXP BUK7507-30B127 technical specifications.
General
| Package/Case | TO-220AB |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 108A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.287nF |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 215W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 157W |
| Rds On Max | 1.15mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK7507-30B127 Datasheet
Download the complete datasheet for NXP BUK7507-30B127 to view detailed technical specifications.
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