The BUK7575-55A,127 is an N-channel TrenchMOS MOSFET with a maximum drain to source breakdown voltage of 55V and a continuous drain current of 20.3A. It features a drain to source resistance of 75mR and a maximum power dissipation of 62W. The device is packaged in a TO-220AB package and is RoHS compliant. It operates over a temperature range of -55°C to 175°C and has a gate to source voltage of 20V. The BUK7575-55A,127 is suitable for high-power applications requiring a high current and low on-resistance.
PackageTO-220AB
PolarityN-CHANNEL
Power62W
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Technical Specifications
NXP BUK7575-55A,127 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 20.3A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 483pF |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 62W |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 70ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK7575-55A,127 Datasheet
Download the complete datasheet for NXP BUK7575-55A,127 to view detailed technical specifications.
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