The BUK762R6-40E,118 is an N-Channel TrenchMOS MOSFET with a maximum drain to source breakdown voltage of 40V and a continuous drain current of 100A. It features a drain to source resistance of 4.9mR and a maximum power dissipation of 263W. The device is packaged in a SOT package and is RoHS compliant. It operates over a temperature range of -55°C to 175°C.
PackageSOT
PolarityN-CHANNEL
Power263W
Quick Jump:
Technical Specifications
NXP BUK762R6-40E,118 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 4.9mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 36ns |
| Input Capacitance | 7.13nF |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 263W |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 263W |
| Rds On Max | 2.6mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 62ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK762R6-40E,118 Datasheet
Download the complete datasheet for NXP BUK762R6-40E,118 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
