The BUK7E2R7-30B,127 is a N-Channel TrenchMOS MOSFET with a maximum drain to source breakdown voltage of 30V and a continuous drain current of 241A. It has a maximum power dissipation of 300W and a drain to source resistance of 2.7mR. The device is packaged in an I2PAK-3 package and is RoHS compliant. The operating temperature range is from -55°C to 175°C. The MOSFET is suitable for high-power applications due to its high current handling capability and low on-resistance.
PackageSOT
PolarityN-CHANNEL
Power300W
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Technical Specifications
NXP BUK7E2R7-30B,127 technical specifications.
General
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 241A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 118ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.212nF |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 2.7mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 113ns |
| Turn-On Delay Time | 31ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK7E2R7-30B,127 Datasheet
Download the complete datasheet for NXP BUK7E2R7-30B,127 to view detailed technical specifications.
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