The BUK9107-55ATE118 is an N-CHANNEL TrenchMOS MOSFET with a maximum drain to source breakdown voltage of 55V and a continuous drain current of 140A. It features a drain to source resistance of 6.2mR and a maximum power dissipation of 272W. The device operates over a temperature range of -55°C to 175°C and is packaged in a SOT package. It is suitable for high-power applications and is compliant with various industry standards.
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NXP BUK9107-55ATE118 technical specifications.
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 140A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 6.2mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 207ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 5.836nF |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 272W |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 272W |
| Rds On Max | 6.2mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 341ns |
| Turn-On Delay Time | 51ns |
| RoHS | Compliant |
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