The BUK9510-100B is a high-power N-channel MOSFET with a drain to source breakdown voltage of 100V and a continuous drain current of 75A. It features a low drain to source resistance of 9.7mR and a power dissipation of 300W. The device is packaged in a TO-220AB package and is lead free. It operates over a temperature range of -55°C to 175°C and is RoHS compliant.
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NXP BUK9510-100B technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 9.7mR |
| Fall Time | 94ns |
| Gate to Source Voltage (Vgs) | 15V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 250ns |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
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