This logic-level N-channel MOSFET is rated for 100 V drain-source voltage and 120 A continuous drain current at a 25 °C mounting base temperature. It is housed in a TO-220AB (SOT78A) through-hole package and is designed with TrenchMOS technology for high-performance automotive switching applications. The device supports up to 349 W total power dissipation and operation from -55 °C to 175 °C junction temperature. It is AEC-Q101 qualified, avalanche rated, and intended for thermally demanding uses such as motor, lamp, solenoid, transmission, and start-stop control systems.
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NXP BUK956R1-100E,127 technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 120A |
| Power Dissipation | 349W |
| Drain-Source On-Resistance Max | 6.1 @ VGS=5 V, ID=25 A, 25 °CmΩ |
| Drain-Source On-Resistance Max | 5.9 @ VGS=10 V, ID=25 A, 25 °CmΩ |
| Gate Threshold Voltage | 1.7 typ, 1.4 to 2.1 @ ID=1 mA, 25 °CV |
| Total Gate Charge | 133nC |
| Gate-Drain Charge | 51nC |
| Input Capacitance | 13100 typpF |
| Reverse Recovery Time | 70ns |
| Thermal Resistance Junction-to-Mounting Base | 0.43K/W |
| Operating Junction Temperature | -55 to 175°C |
| Package | TO-220AB (SOT78A) |
| Aec-q101 | Qualified |
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