N-channel enhancement mode power MOSFET, 55V drain-source voltage, 11A continuous drain current. Features low on-resistance of 68mΩ at 10V Vgs, typical gate charge of 10.5nC at 5V, and input capacitance of 440pF at 25V Vds. Housed in a TO-220F fullpak plastic package with 3 pins and a tab, suitable for through-hole mounting. Maximum power dissipation is 18W, with an operating temperature range of -55°C to 150°C.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220F |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.6(Max) |
| Package Height (mm) | 15.8(Max) |
| Seated Plane Height (mm) | 19.1(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220-F |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 55V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 11A |
| Maximum Drain Source Resistance | 68@10VmOhm |
| Typical Gate Charge @ Vgs | 10.5@5VnC |
| Typical Input Capacitance @ Vds | 440@25VpF |
| Maximum Power Dissipation | 18000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | H1R01 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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