N-channel logic level MOSFET in a 4-pin SC-73 package, featuring a 55V drain-source breakdown voltage and 12A continuous drain current. This TrenchMOS™ device offers a low 29mΩ drain-source on-resistance and a maximum power dissipation of 8W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching speeds with a 14ns turn-on delay and 64ns turn-off delay. Contact plating is tin, and the component is RoHS compliant.
PackageSOT
PolarityN-CHANNEL
Power8W
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Technical Specifications
NXP BUK9832-55A,115 technical specifications.
General
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 29mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 68ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 1.594nF |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 8W |
| Radiation Hardening | No |
| Rds On Max | 29mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 64ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK9832-55A,115 Datasheet
Download the complete datasheet for NXP BUK9832-55A,115 to view detailed technical specifications.
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