The BUK9E4R4-40B,127 is an N-CHANNEL TrenchMOS MOSFET with a maximum drain to source breakdown voltage of 40V and a continuous drain current of 174A. It features a maximum power dissipation of 254W and operates within a temperature range of -55°C to 175°C. The device is packaged in a SOT package and is compliant with RoHS regulations.
Sign in to ask questions about the NXP BUK9E4R4-40B,127 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP BUK9E4R4-40B,127 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 174A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 132ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 7.124nF |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 254W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 254W |
| Radiation Hardening | No |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 197ns |
| Turn-On Delay Time | 44ns |
| RoHS | Compliant |
Download the complete datasheet for NXP BUK9E4R4-40B,127 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
