The BZT03-C180 is a unidirectional silicon transient voltage suppressor diode with a breakdown voltage of 168V and a maximum non-repetitive peak reverse power dissipation of 300W. It has a maximum operating temperature of 175°C and a maximum power dissipation of 1.3W. The diode is packaged in a 2-pin axial configuration and is suitable for use in a variety of applications including overvoltage protection and surge suppression.
PolarityUNIDIRECTIONAL
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Technical Specifications
NXP BZT03-C180 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Breakdown Voltage-Min | 168 |
| Non-rep Peak Rev Power Dis-Max | 300 |
| Clamping Voltage-Max | 249 |
| Power Dissipation-Max | 1.3 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
NXP BZT03-C180 Datasheet
Download the complete datasheet for NXP BZT03-C180 to view detailed technical specifications.
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