The NXP BZV55-B12,115 is a unidirectional silicon zener diode with a maximum operating temperature of 200 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It has a power dissipation of 0.4 watts and is packaged in the O-LELF-R2 package type. The diode element is made of silicon and has a terminal position at the end. It is a single-element device with two terminals and a pin count of two.
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| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | END |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 0.4 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
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