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Technical Specifications
NXP BZV55-B18115 technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 200mV |
| hFE Min | 200 |
| Impedance | 45R |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Max Reverse Current | 50nA |
| Max Reverse Leakage Current | 50nA |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Tolerance | 2% |
| Transition Frequency | 100MHz |
| Working Voltage | 18V |
| Zener Voltage | 18V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BZV55-B18115 Datasheet
Download the complete datasheet for NXP BZV55-B18115 to view detailed technical specifications.
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