The BZV55-C12 is a unidirectional silicon zener diode with a maximum operating temperature of 200 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It features a power dissipation of 0.4 watts and is packaged in a hermetic sealed glass package with two terminals positioned at the end. The diode element is made of silicon and is a single zener diode. The device is suitable for use in a variety of applications where a reliable and efficient zener diode is required.
PolarityUNIDIRECTIONAL
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Technical Specifications
NXP BZV55-C12 technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | END |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 0.4 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP BZV55-C12 Datasheet
Download the complete datasheet for NXP BZV55-C12 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.