The BZX585-C5V6,115 is a surface mount NPN zener diode with a collector emitter breakdown voltage of 60V and a saturation voltage of 250mV. It has a high current gain of 100hFE and a maximum power dissipation of 300mW. The device is packaged in a SOT-223 case and is RoHS compliant. It operates over a temperature range of -65°C to 150°C.
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NXP BZX585-C5V6,115 technical specifications.
| Package/Case | SOT-223 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
| hFE Min | 100 |
| Impedance | 40R |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Max Reverse Leakage Current | 1uA |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Tolerance | 5% |
| Transition Frequency | 100MHz |
| Voltage Tolerance | 5% |
| Zener Voltage | 5.6V |
| RoHS | Compliant |
Download the complete datasheet for NXP BZX585-C5V6,115 to view detailed technical specifications.
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