The IRF640,127 is a 200V 16A TrenchMOS MOSFET packaged in a TO-220-3 through hole package. It has a maximum power dissipation of 136W and an on-resistance of 180mR. The device is RoHS compliant and available in a quantity of 50 per rail/tube packaging.
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NXP IRF640,127 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 1.85nF |
| Max Power Dissipation | 136W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| RoHS | Compliant |
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