N-channel Silicon Junction Field-Effect Transistor (JFET) designed for through-hole mounting. Features a 3-pin TO-92 package with a plastic single-ended leaded construction. Offers a maximum drain-source voltage of 40V and a maximum power dissipation of 400mW. Operates across a wide temperature range from -65°C to 150°C.
PackageSPT
MountingThrough Hole
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Technical Specifications
NXP J112,126 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
SPT
Package Description
Plastic Single Ended Leaded (Through Hole) Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
4.8(Max)
Package Width (mm)
4.2(Max)
Package Height (mm)
5.2(Max)
Seated Plane Height (mm)
7.7(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Channel Type
N
Configuration
Single
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
-40V
Maximum Drain Gate Voltage
-40V
Material
Si
Maximum Power Dissipation
400mW
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
H1R01
EU RoHS
Yes
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
NXP J112,126 Datasheet
Download the complete datasheet for NXP J112,126 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.