This device is an NPN switching transistor intended for general switching and amplification. It is rated for 40 V collector-emitter voltage and 200 mA DC collector current, and it is supplied in a 3-lead SOT23 surface-mounted plastic package. The transistor supports up to 250 mW total power dissipation at 25 °C ambient and operates over a -65 °C to +150 °C ambient temperature range. Typical small-signal performance includes transition frequency of 300 MHz, low collector cut-off current, and collector-emitter saturation voltage as low as 200 mV at 10 mA collector current.
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NXP MMBT3904 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 1 |
| Collector current capability | 200mA |
| Collector-emitter voltage (VCEO) | 40V |
| Pin 1 | base |
| Pin 2 | emitter |
| Pin 3 | collector |
| Collector-base voltage (Vcbo) | 60V |
| Emitter-base voltage (VEBO) | 6V |
| Peak collector current (ICM) | 200mA |
| Peak base current (IBM) | 100mA |
| Total power dissipation (Ptot) at Tamb ≤ 25 °C | 250mW |
| Storage temperature (Tstg) | -65 to +150°C |
| Junction temperature (Tj) | 150°C |
| Operating ambient temperature (Tamb) | -65 to +150°C |
| Thermal resistance from junction to ambient (Rth(j-a)) | 500K/W |
| Collector cut-off current (ICBO) (IE = 0; VCB = 30 V) | 50nA |
| Emitter cut-off current (IEBO) (IC = 0; VEB = 6 V) | 50nA |
| DC current gain (hFE) (VCE = 1 V, Ic = 0.1 mA) | 60 |
| DC current gain (hFE) (VCE = 1 V, Ic = 1 mA) | 80 |
| DC current gain (hFE) (VCE = 1 V, Ic = 10 mA) | 100 to 300 |
| DC current gain (hFE) (VCE = 1 V, Ic = 50 mA) | 60 |
| DC current gain (hFE) (VCE = 1 V, Ic = 100 mA) | 30 |
| Collector-emitter saturation voltage (VCEsat) (Ic = 10 mA; IB = 1 mA) | 200mV |
| Collector-emitter saturation voltage (VCEsat) (Ic = 50 mA; IB = 5 mA) | 300mV |
| Base-emitter saturation voltage (VBEsat) (Ic = 10 mA; IB = 1 mA) | 650 to 850mV |
| Base-emitter saturation voltage (VBEsat) (Ic = 50 mA; IB = 5 mA) | 950mV |
| Collector capacitance (Cc) (IE = Ie = 0; VCB = 5 V; f = 1 MHz) | 4pF |
| Emitter capacitance (Ce) (IC = Ic = 0; VBE = 500 mV; f = 1 MHz) | 8pF |
| Transition frequency (fT) (Ic = 10 mA; VCE = 20 V; f = 100 MHz) | 300MHz |
| Noise figure (F) (Ic = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz) | 5dB |
| Delay time (td) (ICon = 10 mA; IBOn = 1 mA; IBoff = -1 mA) | 35ns |
| Rise time (tr) (ICon = 10 mA; IBOn = 1 mA; IBoff = -1 mA) | 35ns |
| Storage time (ts) (ICon = 10 mA; IBOn = 1 mA; IBoff = -1 mA) | 200ns |
| Fall time (tf) (ICon = 10 mA; IBOn = 1 mA; IBoff = -1 mA) | 50ns |
| Package type | SOT23 |
| Package leads | 3 |
| Marking code | 7A* |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
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