PNP Silicon Bipolar Transistor, 40V Collector Emitter Breakdown Voltage, 200mA Max Collector Current, 400mV Collector Emitter Saturation Voltage. Features a 250MHz transition frequency and 100 minimum hFE. Surface mount TO-236-3 package, operating from -65°C to 150°C. Lead-free construction with 250mW max power dissipation.
PackageTO-236-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP MMBT3906215 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | -40V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP MMBT3906215 Datasheet
Download the complete datasheet for NXP MMBT3906215 to view detailed technical specifications.
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