High-performance RF MOSFET LDMOS amplifier designed for demanding applications. Features 50V drain-source voltage capability and a TO270WB-14 package for efficient thermal management. This integrated circuit delivers robust RF amplification with excellent linearity and power handling.
NXP MMRF2010NR1 technical specifications.
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for NXP MMRF2010NR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.