High-performance RF MOSFET transistor designed for demanding applications. Features an N-channel enhancement mode MOSFET structure with a maximum drain-source voltage of 133V. Delivers efficient power amplification in a robust 3-pin (3+Tab) TO-220 package, suitable for tube packaging.
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Technical Specifications
NXP MRF101AN technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
NXP MRF101AN Datasheet
Download the complete datasheet for NXP MRF101AN to view detailed technical specifications.
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