N-CHANNEL RF Power Field-Effect Transistor designed for high-frequency applications. Features a 65V drain-to-source breakdown voltage and operates at frequencies up to 2.16GHz, with a maximum output power of 38W. Offers a gain of 14dB and a maximum power dissipation of 52.8W. Packaged in SOT for screw mounting, this component is halogen-free, lead-free, and RoHS compliant, with an operating temperature range of -65°C to 200°C.
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| Package/Case | SOT |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 2.16GHz |
| Gain | 14dB |
| Gate to Source Voltage (Vgs) | 15V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 2.17GHz |
| Min Frequency | 2.11GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 38W |
| Max Power Dissipation | 52.8W |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 38W |
| Package Quantity | 150 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 52.8W |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 28V |
| Weight | 0.465355oz |
| RoHS | Compliant |
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