N-channel RF Power FET for high-frequency applications, operating from 869MHz to 960MHz with a maximum output power of 80W. Features a 65V drain-to-source breakdown voltage and a 2A current rating. Delivers 18.5dB gain at 960MHz, with a gate-to-source voltage of 15V. Designed for surface mount installation and packaged in tape and reel. Operates across a wide temperature range of -65°C to 150°C.
Frequency960MHz
Voltage Rating65V
Current Rating2A
MountingSurface Mount
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Technical Specifications
NXP MRF5S9080NR1 technical specifications.
General
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 960MHz |
| Gain | 18.5dB |
| Gate to Source Voltage (Vgs) | 15V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Frequency | 960MHz |
| Min Frequency | 869MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 36W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 80W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 26V |
| Voltage Rating | 65V |
| DC Rated Voltage | 26V |
| Weight | 0.058073oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF5S9080NR1 Datasheet
Download the complete datasheet for NXP MRF5S9080NR1 to view detailed technical specifications.
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