N-channel RF power field-effect transistor in a TO-270-4 surface mount package. Features a drain to source breakdown voltage of 68V, continuous drain current of 950mA, and a maximum output power of 20W at 880MHz. Offers a gain of 19.5dB and a maximum operating temperature of 200°C. Designed for high-power RF applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP MRF5S9100NR1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-270-4 |
| Continuous Drain Current (ID) | 950mA |
| Current Rating | 950mA |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 880MHz |
| Gain | 19.5dB |
| Gate to Source Voltage (Vgs) | 15V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Frequency | 1GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 20W |
| Max Power Dissipation | 336W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 20W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 336W |
| Test Voltage | 26V |
| Voltage Rating | 68V |
| DC Rated Voltage | 26V |
| Weight | 0.058073oz |
| RoHS | Not Compliant |
Download the complete datasheet for NXP MRF5S9100NR1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
