MRF5S9100NR1

RF Power FET, 20W, 68V, 880MHz, N-CH, TO-270-4

N-channel RF power field-effect transistor in a TO-270-4 surface mount package. Features a drain to source breakdown voltage of 68V, continuous drain current of 950mA, and a maximum output power of 20W at 880MHz. Offers a gain of 19.5dB and a maximum operating temperature of 200°C. Designed for high-power RF applications.

Frequency880MHz

PackageTO-270-4

Voltage Rating68V

Current Rating950mA

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Technical Specifications

NXP MRF5S9100NR1 technical specifications.

General

Package/Case	TO-270-4
Continuous Drain Current (ID)	950mA
Current Rating	950mA
Drain to Source Breakdown Voltage	68V
Drain to Source Voltage (Vdss)	68V
Frequency	880MHz
Gain	19.5dB
Gate to Source Voltage (Vgs)	15V
Halogen Free	Halogen Free
Lead Free	Contains Lead
Max Frequency	1GHz
Max Operating Temperature	200°C
Min Operating Temperature	-65°C
Max Output Power	20W
Max Power Dissipation	336W
Mount	Surface Mount
Number of Elements	1
Output Power	20W
Package Quantity	500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	336W
Test Voltage	26V
Voltage Rating	68V
DC Rated Voltage	26V
Weight	0.058073oz