The MRF5S9101NBR1 is a high-frequency N-CHANNEL RF transistor with a maximum operating temperature of -65°C to 150°C and a maximum power dissipation of 427W. It features a drain to source breakdown voltage of 68V and a continuous drain current of 700mA. The transistor has a gain of 17.5dB and operates at a frequency of 960MHz. It is packaged in a TO-272-4 package and is available in quantities of 500 on tape and reel.
Frequency960MHz
PackageTO-272-4
Voltage Rating68V
MountingScrew
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Technical Specifications
NXP MRF5S9101NBR1 technical specifications.
General
| Package/Case | TO-272-4 |
| Continuous Drain Current (ID) | 700mA |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 960MHz |
| Gain | 17.5dB |
| Gate to Source Voltage (Vgs) | 15V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 427W |
| Mount | Screw |
| Output Power | 100W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 427W |
| Test Voltage | 26V |
| Voltage Rating | 68V |
| Weight | 0.067412oz |
Compliance
| RoHS | Not Compliant |
Datasheet
NXP MRF5S9101NBR1 Datasheet
Download the complete datasheet for NXP MRF5S9101NBR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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