N-channel RF MOSFET transistor for high-power applications, featuring a 68V drain-source breakdown voltage and a 2.2A current rating. Operates efficiently at frequencies up to 2.7GHz with a typical gain of 14.6dB and a maximum output power of 35W. Designed for demanding environments with a wide operating temperature range from -65°C to 200°C and a high power dissipation capability of 603W. This lead-free, halogen-free component is supplied in a 5-pin NI-1230 package, mounted via screw, and available on tape and reel.
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| Current Rating | 2.2A |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.66GHz |
| Gain | 14.6dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 2.7GHz |
| Min Frequency | 2.6GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 35W |
| Max Power Dissipation | 603W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 35W |
| Package Quantity | 50 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 603W |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.465355oz |
| RoHS | Compliant |
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