N-channel RF power FET designed for high-frequency applications, operating from 2.6 GHz to 2.7 GHz with a maximum output power of 35W. Features a drain-to-source voltage of 68V, a current rating of 2.2A, and a gain of 14.6dB. This component offers a wide operating temperature range from -65°C to 200°C and is constructed with lead-free and halogen-free materials. Packaged on tape and reel for efficient assembly, it is suitable for demanding RF power amplification.
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| Current Rating | 2.2A |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.66GHz |
| Gain | 14.6dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 2.7GHz |
| Min Frequency | 2.6GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 35W |
| Max Power Dissipation | 603W |
| Mount | Screw |
| Number of Elements | 1 |
| Operating Frequency | 2.6 GHz to 2.7 GHz |
| Output Power | 35W |
| Package Quantity | 150 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.465355oz |
| RoHS | Not CompliantNo |
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