RF Power MOSFET, N-CHANNEL, L BAND, Si, TO-270 package. Features 68V Drain to Source Breakdown Voltage (Vdss) and 60W Output Power. Operates across a frequency range of 1.8GHz to 2GHz, with a typical gain of 15dB. Maximum power dissipation is 216W, and it supports a Gate to Source Voltage (Vgs) of 12V. Surface mountable, halogen-free, and RoHS compliant.
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| Package/Case | TO-270-4 |
| Current Rating | 2.5mA |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 1.99GHz |
| Gain | 15dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Frequency | 2GHz |
| Min Frequency | 1.8GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 25W |
| Max Power Dissipation | 216W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 60W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 21.6W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 26V |
| Voltage Rating | 68V |
| DC Rated Voltage | 26V |
| Weight | 0.058073oz |
| RoHS | Compliant |
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