RF Power MOSFET, N-CHANNEL, Si, L-Band, Surface Mount. Features 68V Drain to Source Breakdown Voltage and 29W Max Output Power at 1.99GHz. Operates across a frequency range of 1.93GHz to 1.99GHz with 16dB gain. Supports a wide temperature range from -65°C to 225°C. Halogen Free, Lead Free, and RoHS Compliant.
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NXP MRF6S19140HSR3 technical specifications.
| Current Rating | 900mA |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 1.99GHz |
| Gain | 16dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 1.99GHz |
| Min Frequency | 1.93GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 29W |
| Max Power Dissipation | 52.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 29W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 52.8W |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.238367oz |
| RoHS | Compliant |
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