
N-channel RF Power MOSFET, TO-270 package, designed for S-band applications with a frequency range of 1.6GHz to 2.2GHz. Features a 68V drain-to-source breakdown voltage and 10W output power. Offers 15.5dB gain at 2.17GHz and a 12V gate-to-source voltage. This surface mount component operates from -65°C to 225°C, is halogen-free, lead-free, and RoHS compliant.
NXP MRF6S20010NR1 technical specifications.
| Package/Case | TO-270 |
| Current Rating | 10uA |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.17GHz |
| Gain | 15.5dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 2.2GHz |
| Min Frequency | 1.6GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 10W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.018679oz |
| RoHS | Compliant |
Download the complete datasheet for NXP MRF6S20010NR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
