N-channel RF power field-effect transistor designed for high-frequency applications, operating from 2.11 GHz to 2.17 GHz with a maximum output power of 11.5W. Features a drain-to-source voltage rating of 68V and a gain of 16dB. This component is housed in a SOT package, suitable for screw mounting, and operates within a temperature range of -65°C to 225°C. It is halogen-free, lead-free, and RoHS compliant, supplied in tape and reel packaging.
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| Package/Case | SOT |
| Current Rating | 10uA |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.16GHz |
| Gain | 16dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 2.17GHz |
| Min Frequency | 2.11GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 11.5W |
| Max Power Dissipation | 151W |
| Mount | Screw |
| Number of Elements | 1 |
| Operating Frequency | 2.11 GHz to 2.17 GHz |
| Output Power | 11.5W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.130369oz |
| RoHS | Compliant |
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