N-channel RF power field-effect transistor designed for high-frequency applications. Features a 68V drain-to-source breakdown voltage and operates at frequencies up to 2.12GHz, with a maximum output power of 14W. Offers a typical gain of 15.5dB at a 28V test voltage and a 610mA current rating. This surface mount component is supplied on tape and reel, with a maximum operating temperature of 225°C.
Frequency2.12GHz
Voltage Rating68V
Current Rating610mA
MountingScrew, Surface Mount
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Technical Specifications
NXP MRF6S21060NBR1 technical specifications.
General
| Current Rating | 610mA |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.12GHz |
| Gain | 15.5dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Not Halogen Free |
| Lead Free | Contains Lead |
| Max Frequency | 2.17GHz |
| Min Frequency | 2.11GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 14W |
| Mount | Screw, Surface Mount |
| Number of Elements | 1 |
| Output Power | 14W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.067412oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF6S21060NBR1 Datasheet
Download the complete datasheet for NXP MRF6S21060NBR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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