The MRF6S21100NR1 is a high-power N-CHANNEL RF transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a voltage rating of 68V and a current rating of 950mA. The device is packaged in a quantity of 500 units per reel and is halogen free. The transistor has a maximum power dissipation of 307W and an output power of 23W. It is designed for use in high-frequency applications up to 2.16GHz.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP MRF6S21100NR1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Current Rating | 950mA |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.16GHz |
| Gain | 14.5dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 307W |
| Output Power | 23W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 307W |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.057671oz |
| RoHS | Not Compliant |
Download the complete datasheet for NXP MRF6S21100NR1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
