N-channel RF power field-effect transistor designed for high-frequency applications. Features a 68V drain-to-source breakdown voltage and a 28W maximum output power at 2.39GHz. Operates within a frequency range of 2.3GHz to 2.4GHz, offering a typical gain of 15.2dB. Housed in a surface-mount SOT package, this component is halogen-free and lead-free, suitable for operation between -65°C and 200°C.
Frequency2.39GHz
PackageSOT
Voltage Rating68V
Current Rating1.3A
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Technical Specifications
NXP MRF6S23140HSR3 technical specifications.
General
| Package/Case | SOT |
| Current Rating | 1.3A |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.39GHz |
| Gain | 15.2dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 2.4GHz |
| Min Frequency | 2.3GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 28W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 28W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.238367oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF6S23140HSR3 Datasheet
Download the complete datasheet for NXP MRF6S23140HSR3 to view detailed technical specifications.
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