RF Power FET, N-CHANNEL, featuring 68V Drain to Source Breakdown Voltage and 28V DC Rated Voltage. Operates at frequencies from 2.6GHz to 2.7GHz with a maximum output power of 20W and a gain of 15.5dB. Offers a high power dissipation of 350W and a maximum operating temperature of 225°C. This component is halogen and lead-free, packaged on tape and reel for 250 units.
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| Current Rating | 900mA |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.66GHz |
| Gain | 15.5dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 2.7GHz |
| Min Frequency | 2.6GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 20W |
| Max Power Dissipation | 350W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 20W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350W |
| Radiation Hardening | No |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.226635oz |
| RoHS | Not CompliantNo |
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