N-channel RF power FET designed for high-frequency applications. Features a 68V drain-to-source breakdown voltage and a 20W output power capability. Operates efficiently at frequencies up to 2.7GHz with a typical gain of 15.5dB. This surface mount component offers a wide operating temperature range from -65°C to 225°C and a maximum power dissipation of 350W. Halogen and lead-free construction.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP MRF6S27085HSR3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Current Rating | 900mA |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.66GHz |
| Gain | 15.5dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 2.7GHz |
| Min Frequency | 2.6GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 20W |
| Max Power Dissipation | 350W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 20W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350W |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.16801oz |
| RoHS | Not Compliant |
Download the complete datasheet for NXP MRF6S27085HSR3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
