The MRF6V10250HSR3 is a high-power N-CHANNEL RF transistor with a drain to source breakdown voltage of 100V and a frequency of 1.09GHz. It has a gain of 21dB and an output power of 250W. The transistor is packaged in a FLATPACK, R-CDFP-F2 package and is halogen free. It operates over a temperature range of -65°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP MRF6V10250HSR3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Frequency | 1.09GHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Output Power | 250W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Test Voltage | 50V |
| Voltage Rating | 100V |
| Weight | 0.16801oz |
| RoHS | Compliant |
Download the complete datasheet for NXP MRF6V10250HSR3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
