The MRF6V10250HSR3 is a high-power N-CHANNEL RF transistor with a drain to source breakdown voltage of 100V and a frequency of 1.09GHz. It has a gain of 21dB and an output power of 250W. The transistor is packaged in a FLATPACK, R-CDFP-F2 package and is halogen free. It operates over a temperature range of -65°C to 150°C.
Frequency1.09GHz
Voltage Rating100V
PolarityN-CHANNEL
Power250W
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Technical Specifications
NXP MRF6V10250HSR3 technical specifications.
General
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Frequency | 1.09GHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Output Power | 250W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Test Voltage | 50V |
| Voltage Rating | 100V |
| Weight | 0.16801oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF6V10250HSR3 Datasheet
Download the complete datasheet for NXP MRF6V10250HSR3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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