
High-power RF FET transistor designed for demanding applications. Features 300W output power and 22dB gain, operating efficiently from 10MHz to 600MHz with a nominal operating frequency of 600 MHz. This N-channel device boasts a 110V drain-to-source voltage and is housed in a TO-270-4 package, supporting surface mount and screw mounting. Operating across a wide temperature range of -65°C to 150°C, it is RoHS and Halogen Free compliant.
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| Package/Case | TO-270-4 |
| Drain to Source Voltage (Vdss) | 110V |
| DS Breakdown Voltage-Min | 110V |
| Frequency | 450MHz |
| Gain | 22dB |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 600MHz |
| Min Frequency | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount, Screw |
| Number of Elements | 1 |
| Operating Frequency | 600 MHz |
| Output Power | 300W |
| Package Quantity | 50 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 110V |
| Weight | 0.067412oz |
| RoHS | Compliant |
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