MRF6V4300NBR5

High-power RF FET transistor designed for demanding applications. Features 300W output power and 22dB gain, operating efficiently from 10MHz to 600MHz with a nominal operating frequency of 600 MHz. This N-channel device boasts a 110V drain-to-source voltage and is housed in a TO-270-4 package, supporting surface mount and screw mounting. Operating across a wide temperature range of -65°C to 150°C, it is RoHS and Halogen Free compliant.