High-power RF FET transistor designed for demanding applications. Delivers 1kW output power at 450MHz with 20dB gain. Features a 110V drain-to-source breakdown voltage and operates across a 10MHz to 500MHz frequency range. This N-channel device is halogen-free, lead-free, and RoHS compliant, suitable for operation from -65°C to 225°C. Mounting is via screw, and it is supplied in tape and reel packaging.
Frequency450MHz
Voltage Rating110V
MountingScrew
PolarityN-CHANNEL
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Technical Specifications
NXP MRF6VP41KHR6 technical specifications.
General
| Continuous Drain Current (ID) | 5mA |
| Drain to Source Breakdown Voltage | 110V |
| Drain to Source Voltage (Vdss) | 110V |
| DS Breakdown Voltage-Min | 110V |
| Frequency | 450MHz |
| Gain | 20dB |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 500MHz |
| Min Frequency | 10MHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 200W |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 1kW |
| Package Quantity | 150 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 110V |
| Weight | 0.464036oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF6VP41KHR6 Datasheet
Download the complete datasheet for NXP MRF6VP41KHR6 to view detailed technical specifications.
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