The MRF7P20040HR3 is a N-CHANNEL RF transistor with a drain to source breakdown voltage of 65V and a continuous drain current of 150mA. It operates at frequencies up to 1.93GHz and has a maximum output power of 10W. The transistor is packaged in tape and reel quantities of 250 and is suitable for use in high-temperature environments, with an operating range of -65°C to 150°C.
Frequency1.93GHz
Voltage Rating65V
Current Rating10uA
MountingScrew
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Technical Specifications
NXP MRF7P20040HR3 technical specifications.
General
| Continuous Drain Current (ID) | 150mA |
| Current Rating | 10uA |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 1.93GHz |
| Gain | 17.5dB |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Max Frequency | 2.2GHz |
| Min Frequency | 1.8GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 10W |
| Mount | Screw |
| Output Power | 29W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Weight | 0.226635oz |
Compliance
| RoHS | Not Compliant |
Datasheet
NXP MRF7P20040HR3 Datasheet
Download the complete datasheet for NXP MRF7P20040HR3 to view detailed technical specifications.
No datasheet is available for this part.
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