N-channel RF power FET designed for high-frequency applications, operating from 1.805GHz to 1.88GHz with a nominal frequency of 1.81GHz. Features a 65V drain-to-source breakdown voltage and a 1.4A current rating. Delivers 50W maximum output power with a gain of 17.5dB at a test voltage of 28V. Operates across a wide temperature range from -65°C to 225°C. This component is halogen-free and lead-free, supplied in tape and reel packaging.
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| Current Rating | 1.4A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 1.81GHz |
| Gain | 17.5dB |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 1.88GHz |
| Min Frequency | 1.805GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 50W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 50W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| Weight | 0.343346oz |
| RoHS | Not CompliantNo |
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