MRF7S18170HR3

RF Power FET, 1.81GHz, 65V, 50W, N-CHANNEL

N-channel RF power FET designed for high-frequency applications, operating from 1.805GHz to 1.88GHz with a nominal frequency of 1.81GHz. Features a 65V drain-to-source breakdown voltage and a 1.4A current rating. Delivers 50W maximum output power with a gain of 17.5dB at a test voltage of 28V. Operates across a wide temperature range from -65°C to 225°C. This component is halogen-free and lead-free, supplied in tape and reel packaging.

Frequency1.81GHz

Voltage Rating65V

Current Rating1.4A

MountingScrew

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Technical Specifications

NXP MRF7S18170HR3 technical specifications.

General

Current Rating	1.4A
Drain to Source Breakdown Voltage	65V
Drain to Source Voltage (Vdss)	65V
Frequency	1.81GHz
Gain	17.5dB
Gate to Source Voltage (Vgs)	10V
Halogen Free	Halogen Free
Lead Free	Lead Free
Max Frequency	1.88GHz
Min Frequency	1.805GHz
Max Operating Temperature	225°C
Min Operating Temperature	-65°C
Max Output Power	50W
Mount	Screw
Number of Elements	1
Output Power	50W
Package Quantity	250
Packaging	Tape and Reel
Polarity	N-CHANNEL
Radiation Hardening	No
Test Voltage	28V
Voltage Rating	65V
DC Rated Voltage	65V
Weight	0.343346oz