N-channel RF power MOSFET designed for L-band applications, operating from 1.93GHz to 1.99GHz. Features a 65V drain-to-source voltage and 1A current rating, delivering up to 29W output power with 17.5dB gain at 1.99GHz. This surface mount component offers a wide operating temperature range from -65°C to 225°C and is RoHS compliant.
Frequency1.99GHz
Voltage Rating65V
Current Rating1A
MountingScrew, Surface Mount
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Technical Specifications
NXP MRF7S19100NBR1 technical specifications.
General
| Current Rating | 1A |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 1.99GHz |
| Gain | 17.5dB |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Frequency | 1.99GHz |
| Min Frequency | 1.93GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 29W |
| Mount | Screw, Surface Mount |
| Number of Elements | 1 |
| Output Power | 29W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 28V |
| Weight | 0.067412oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF7S19100NBR1 Datasheet
Download the complete datasheet for NXP MRF7S19100NBR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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