The MRF7S19210HR3 is a high-power N-CHANNEL RF transistor with a drain to source breakdown voltage of 65V and a frequency of 1.99GHz. It can handle an output power of 63W and operates within a temperature range of -65°C to 150°C. The transistor is mounted using a screw and is RoHS compliant. It is available in a package quantity of 250, packaged on a tape and reel.
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| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 1.99GHz |
| Gain | 20dB |
| Gate to Source Voltage (Vgs) | 10V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Screw |
| Output Power | 63W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Weight | 0.226635oz |
| RoHS | Compliant |
Download the complete datasheet for NXP MRF7S19210HR3 to view detailed technical specifications.
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